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81.
Yb3+-doped Lu2O3 nanoparticles produced by laser ablation were used to fabricate transparent ceramics by a combination of pressureless sintering in vacuum (PS) followed by a hot isostatic pressing (HIPing). The samples were subjected to various PS and HIPing conditions and the microstructure evolution and its correlation with the transmittance were investigated. Relative densities of over 97% were achieved after PS at the temperatures of 1250–1700 °C. Rapid grain growth occurred within PS and HIPing temperatures above 1500 °C leading to formation of intragranular porosity which is deleterious for optical quality. Higher transmittance (81.7% at λ = 1080 nm) and ultrafine microstructure with an average grain size of 0.35 μm were obtained by PS at 1250 °C followed by HIPing at 1400 °C for 5 h under 207 MPa. Output power of 2.02 W with a slope efficiency of 46.5% was obtained under a quasi-continuous wave end pumping at 929.4 nm.  相似文献   
82.
Atomic Energy - The results of calculations and experimental determination of the neutronics characteristics of the IRT-T research reactor are presented. The IRT-T reactor is a pool reactor with...  相似文献   
83.
Theoretical Foundations of Chemical Engineering - The features of distribution are studied and a complex technology for the separation of samarium, europium, and gadolinium is proposed. This...  相似文献   
84.
Semiconductors - A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of...  相似文献   
85.
The lithium-doped phases Gd1.7Li0.3Zr2O6.7 and Gd2Zr1.7Li0.3O6.55 with a pyrochlore structure were prepared by the modified Pechini method using citric acid and glycerol. Monitoring of the lithium content by using a nuclear microanalysis showed that a significant loss of lithium occurred after heat treatment above 1200 °C. Dense ceramics with a stoichiometric lithium content can be prepared by a low temperature microwave sintering (1100 °C). The introduction of lithium in the Gd-sublattice was accompanied by a decrease in the unit cell parameter (a = 10.5208 (1) Å vs 10.5346 (2) Å for Gd2Zr2O7) and during doping at the Zr-sites with lithium, the cell parameter increased (10.5720 (1) Å). The doping in both cases led to an increase in the free cell volume. The impedance spectroscopy results showed that the bulk conductivity can be enhanced by the Li+-doping at the Gd3+-site by almost an order of magnitude. The sample Gd2Zr1.7Li0.3O6.55 had a conductivity lower than that of Gd1.7Li0.3Zr2O6.7 due to the possible trapping of oxygen vacancies by a high-charged acceptor defect LiZr???. The conductivity?pO2 measurements showed that the Li-containing phase was a pure oxide-ion conductor at T < 800 °C.  相似文献   
86.
Journal of Inorganic and Organometallic Polymers and Materials - The reaction of potassium tetracyanocupprate(I) with triethyltin bromide in presence of phenanthroline (Phen) and quinoxaline (Qox)...  相似文献   
87.
Theoretical Foundations of Chemical Engineering - The state of the art of studies in the field of structure formation in extraction systems with metal compounds is considered. Structure formation...  相似文献   
88.
Ushakov  N. M.  Kosobudsky  I. D. 《Semiconductors》2019,53(16):2162-2165
Semiconductors - CdS nanoparticles (NPs) as quantum dots (QDs) added into low density polyethylene (LDPE) can significantly change the MW dielectric properties of the composites. Introducing into...  相似文献   
89.
Semiconductors - Nanocomposite thermoelectrics based on Bi0.45Sb1.55Te2.985 solid solution of p-type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the...  相似文献   
90.
Korolkov  O. M.  Kozlovski  V. V.  Lebedev  A. A.  Sleptsuk  N.  Toompuu  J.  Rang  T. 《Semiconductors》2019,53(7):975-978
Semiconductors - The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied....  相似文献   
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